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 M
Features
TC1121
Package Type
8-Pin PDIP
FC CAP+ 1 2 8 V+
100mA Charge Pump Voltage Converter with Shutdown
* Optional High-Frequency Operation Allows Use of Small Capacitors * Low Operating Current (FC = GND) - 50A * High Output Current (100mA) * Converts a 2.4V to 5.5V Input Voltage to a Corresponding Negative Output Voltage (Inverter Mode) * Uses Only 2 Capacitors; No Inductors Required * Selectable Oscillator Frequency - 10kHz to 200kHz * Power-Saving Shutdown Input * Available in 8-Pin MSOP, 8-Pin PDIP and 8-Pin Small Outline (SOIC) Packages
TC1121CPA 7 OSC GND 3 TC1121EPA 6 SHDN
4 5 VOUT
CAP-
8-Pin SOIC 8-Pin MSOP
FC 1 8 V+
Applications
* * * * * Laptop Computers Medical Instruments Disk Drives P-Based Controllers Process Instrumentation
TC1121COA CAP+ 2 TC1121EOA 7 OSC GND 3 TC1121CUA 6 SHDN TC1121EUA
CAP- 4 5 VOUT
General Description
The TC1121 is a charge pump converter with 100mA output current capability. It converts a 2.4V to 5.5V input to a corresponding negative output voltage. As with all charge pump converters, the TC1121 uses no inductors saving cost, size and EMI. An on-board oscillator operates at a typical frequency of 10kHz (at V+ = 5V) when the frequency control input (FC) is connected to ground. The oscillator frequency increases to 200kHz when FC is connected to V+, allowing the use of smaller capacitors. Operation at sub-10kHz frequencies results in lower quiescent NScurrent and is accomplished with the addition of an external capacitor from OSC (pin 7) to ground. The TC1121 also can be driven from an external clock NSconnected OSC. Typical supply current at 10kHz is 50A, and falls to less than 1A when the shutdown input is brought low, whether the internal or an external clock is used. The TC1121 is available in 8-pin SOIC, MSOP and PDIP packages.
Device Selection Table
Part Number TC1121COA TC1121CPA TC1121CUA TC1121EOA TC1121EPA TC1121EUA Package 8-Pin SOIC 8-Pin PDIP 8-Pin MSOP 8-Pin SOIC 8-Pin PDIP 8-Pin MSOP Operating Temp. Range 0C to +70C 0C to +70C 0C to +70C -40C to +85C -40C to +85C -40C to +85C
2002 Microchip Technology Inc.
DS21358B-page 1
TC1121
Functional Block Diagram
1 AP AP
HDN
SC Control
C1121
UT
C
RC Oscillator
witch atrix
2
SC
ogic ircuits ND
DS21358B-page 2
2002 Microchip Technology Inc.
TC1121
1.0 ELECTRICAL CHARACTERISTICS
*Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.
Absolute Maximum Ratings*
Supply Voltage (VDD) ............................................... 6V OSC, FC, SHDN Input Voltage .....-0.3V to (V+ + 0.3V) Output Short Circuit Duration ........................... 10 Sec. Package Power Dissipation (TA 70C) 8-Pin PDIP ............................................... 730mW 8-Pin SOIC ............................................... 470mW 8-Pin MSOP ............................................. 333mW Operating Temperature Range C Suffix............................................ 0C to +70C E Suffix......................................... -40C to +85C Storage Temperature Range.............. -65C to +150C
TC1121 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: TA = 0C to 70C (C suffix), -40C to +85C (E suffix), V+= 5V 10% COSC = Open, C1, C2 = 10F, FC = V+, SHDN = VIH, typical values are at TA = 25C unless otherwise noted. Symbol IDD ISHUTDOWN V+ VIH VIL IIN ROUT IOUT FOSC PEFF Parameter Active Supply Current Shutdown Supply Current Supply Voltage SHDN Input Logic High SHDN Input Logic Low Input Leakage Current Output Source Resistance Output Current Oscillator Frequency Power Efficiency Min -- -- -- 2.4 VDD x 0.8 -- -1 -4 -- 60 5 100 -- 93 94 -- 99 Typ 50 0.6 0.2 -- -- -- -- -- 12 100 10 200 -- 97 97 92 99.9 -- -- -- -- -- -- kHz % Max 100 1 1.0 5.5 -- 0.4 1 4 20 Units
A mA A
Test Conditions RL = Open, FC = Open or GND RL = Open, FC = V+ SHDN = 0V
V V V
A
SHDN, OSC FC pin IOUT = 60mA VOUT = more negative than -3.75V Pin 7 Open, Pin 1 Open or GND SHDN = VIH, Pin 1 = V+ FC = GND for all RL = 2k between V+ and VOUT RL = 1k between VOUT and GND IL = 60mA to GND RL = Open
VEFF
Note 1:
Voltage Conversion Efficiency
%
Connecting any input terminal to voltages greater than V+ or less than GND may cause destructive latch-up. It is recommended that no inputs from sources operating from external supplies be applied prior to "power up" of the TC1121.
2002 Microchip Technology Inc.
DS21358B-page 3
TC1121
2.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 2-1.
TABLE 2-1:
Pin No. (8-Pin MSOP, PDIP, SOIC) 1 2 3 4 5 6 7 8
PIN FUNCTION TABLE
Symbol FC CAP+ GND CAP- OUT SHDN OSC V+ Description Frequency control for internal oscillator, FC = open, FOSC = 10kHz typ; FC = V+, FOSC = 200kHz typ; FC has no effect when OSC pin is driven externally. Charge-pump capacitor, positive terminal. Power-supply ground input. Charge-pump capacitor, negative terminal. Output, negative voltage. Shutdown. Oscillator control input. An external capacitor can be added to slow the oscillator. Take care to minimize stray capacitance. An external oscillator also may be connected to overdrive OSC. Power-supply positive voltage input.
DS21358B-page 4
2002 Microchip Technology Inc.
TC1121
3.0
3.1
APPLICATIONS
Negative Voltage Converter
3.2
Changing Oscillator Frequency
The TC1121's clock frequency is controlled by four modes:
The TC1121 is typically used as a charge-pump voltage inverter. C1 and C2 are the only two external capacitors used in the operating circuit (Figure 3-1).
TABLE 3-1:
FC
Open FC = V+ Open or FC = V+ Open Open Open
OSCILLATOR FREQUENCY MODES
OSC Oscillator Frequency
10kHz 200kHz See Typical Operating Characteristics External Clock Frequency
FIGURE 3-1:
CHARGE PUMP INVERTER
.4V to 5.5V C AP
N
External Capacitor External Clock
SC
C1121
1 ND AP HDN
UT
SHDN*
UT
The oscillator runs at 10kHz (typical) when FC and OSC are not connected. The oscillator frequency is lowered by connecting a capacitor between OSC and GND, but FC can still multiply the frequency by 20 times in this mode. An external clock source that swings within 100mV of V+ and GND may overdrive OSC in the inverter mode. OSC can be driven by any CMOS logic output. When OSC is overdriven, FC has no effect. Note that the frequency of the signal appearing at CAP+ and CAP- is half that of the oscillator. In addition, by lowering the oscillator frequency, the effective output resistance of the charge-pump increases. To compensate for this, the value of the charge-pump capacitors may be increased. Because the 5kHz output ripple frequency may be low enough to interfere with other circuitry, the oscillator frequency can be increased with the use of the FC pin or an external oscillator. The output ripple frequency is half the selected oscillator frequency. Although the TC1121's quiescent current will increase if the clock frequency is increased, it allows smaller capacitance values to be used for C1 and C2.
2
SHDN should be tied to V N if not used.
The TC1121 is not sensitive to load current changes, although its output is not actively regulated. A typical output source resistance of 11.8 means that an input of +5V results in -5V output voltage under light load, and only decreases to -3.8V typ with a 100mA load. The supplied output current is from capacitor C2 during one-half the charge-pump cycle. This results in a peak-to-peak ripple of: VRIPPLE = IOUT/2(fPUMP) (C2) + IOUT (ESRC2) Where fPUMP is 5kHz (one half the nominal 10kHz oscillator frequency), and C2 = 150F with an ESR of 0.2, ripple is about 90mV with a 100mA load current. If C2 is raised to 390F, the ripple drops to 45mV.
3.3
Capacitor Selection
In addition to load current, the following factors affect the TC1121 output voltage drop from its ideal value 1) output resistance, 2) pump (C1) and reservoir (C2) capacitor ESRs and 3) C1 and C2 capacitance. The voltage drop is the load current times the output resistance. The loss in C2 is the load current times C2's ESR; C1's loss is larger because it handles currents greater than the load current during charge-pump operation. Therefore, the voltage drop due to C1 is about four times C1's ESR multiplied by the load current, and a low (or high) ESR capacitor has a greater impact on performance for C1 than for C2. In general, as the TC1121's pump frequency increases, capacitance values needed to maintain comparable ripple and output resistance diminish proportionately.
2002 Microchip Technology Inc.
DS21358B-page 5
TC1121
3.4 Cascading Devices 3.5 Paralleling Devices
To produce greater negative magnitudes of the initial supply voltage, the TC1121 may be cascaded (see Figure 3-2). Resulting output resistance is approximately equal to the sum of individual TC1121 ROUT values. The output voltage (where n is an integer representing the number of devices cascaded) is defined by VOUT = -n (VIN). To reduce output resistance, multiple TC1121s may be paralleled (see Figure 3-3). Each device needs a pump capacitor C1, but the reservoir capacitor C2 serves all devices. The value of C2 should be increased by a factor of n (the number of devices).
FIGURE 3-2:
CASCADING TC1121s TO INCREASE OUTPUT VOLTAGE
N
C AP 1 ND
N
C AP 1n HDN* ND AP
VIN 8 SC 7
SC
C1121
HDN AP 1" 2
UT
C1121
HDN n"
UT
HDN*
UT
2n
SHDN should be tied to VIN if ot used.
FIGURE 3-3:
PARALLELING TC1121s TO REDUCE OUTPUT RESISTANCE
N
FC 2 CAP+ C1 ND AP 1"
N
C SC 1n HDN* AP n" AP ND SC
SC
C1121
HDN
UT
C1121
HDN
UT
HDN*
2
UT = R UT of TC1121)/n(number of devices) IN if not used.
DS21358B-page 6
2002 Microchip Technology Inc.
TC1121
3.6 Combined Positive Supply Multiplication and Negative Voltage Conversion
and C4 are the respective capacitors for multiplied positive voltage. This particular configuration leads to higher source impedances of the generated supplies due to the finite impedance of the common charge-pump driver.
Figure 3-4 shows this dual function circuit, in which capacitors C1 and C2 perform pump and reservoir functions to generate negative voltage. Capacitors C3
FIGURE 3-4:
COMBINED POSITIVE MULTIPLER AND NEGATIVE CONVERTER
VIN C AP
N
+
1, D2 = 1N4148 1
UT = VIN
-
SC
C1121
1 ND
UT
2 AP HDN HDN*
2 V 3 4
UT = (2VIN) - ) - (VFD2)
SHDN should be tied to VIN if not used.
2002 Microchip Technology Inc.
DS21358B-page 7
TC1121
4.0
4.1
PACKAGING INFORMATION
Package Marking Information
Package marking data not available at this time.
4.2
Package Dimensions
8-Pin MSOP
PIN 1
.122 (3.10) .114 (2.90)
.197 (5.00) .189 (4.80)
.026 (0.65) TYP.
.122 (3.10) .114 (2.90) .043 (1.10) MAX. .016 (0.40) .010 (0.25) .006 (0.15) .002 (0.05)
6 MAX. .028 (0.70) .016 (0.40)
.008 (0.20) .005 (0.13)
Dimensions: inches (mm)
8-Pin Plastic DIP
PIN 1
.260 (6.60) .240 (6.10)
.045 (1.14) .030 (0.76) .400 (10.16) .348 (8.84) .200 (5.08) .140 (3.56) .150 (3.81) .115 (2.92)
.070 (1.78) .040 (1.02)
.310 (7.87) .290 (7.37)
.040 (1.02) .020 (0.51)
.015 (0.38) .008 (0.20) .400 (10.16) .310 (7.87)
3 MIN.
.110 (2.79) .090 (2.29)
.022 (0.56) .015 (0.38)
Dimensions: inches (mm)
DS21358B-page 8
2002 Microchip Technology Inc.
TC1121
Package Dimensions (Continued)
8-Pin SOIC
PIN 1
.157 (3.99) .150 (3.81)
.244 (6.20) .228 (5.79)
.050 (1.27) TYP.
.197 (5.00) .189 (4.80) .069 (1.75) .053 (1.35) .020 (0.51) .010 (0.25) .013 (0.33) .004 (0.10) .010 (0.25) .007 (0.18) .050 (1.27) .016 (0.40) Dimensions: inches (mm)
8 MAX. .
2002 Microchip Technology Inc.
DS21358B-page 9
TC1121
NOTES:
DS21358B-page 10
2002 Microchip Technology Inc.
TC1121
Sales and Support
Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: 1. 2. 3. Your local Microchip sales office The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277 The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. New Customer Notification System Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
2002 Microchip Technology Inc.
DS21358B-page11
TC1121
NOTES:
DS21358B-page12
2002 Microchip Technology Inc.
TC1121
Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchip's products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property rights.
Trademarks The Microchip name and logo, the Microchip logo, FilterLab, KEELOQ, microID, MPLAB, PIC, PICmicro, PICMASTER, PICSTART, PRO MATE, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. dsPIC, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, microPort, Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM, MXDEV, PICC, PICDEM, PICDEM.net, rfPIC, Select Mode and Total Endurance are trademarks of Microchip Technology Incorporated in the U.S.A. Serialized Quick Turn Programming (SQTP) is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. (c) 2002, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received QS-9000 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona in July 1999 and Mountain View, California in March 2002. The Company's quality system processes and procedures are QS-9000 compliant for its PICmicro(R) 8-bit MCUs, KEELOQ(R) code hopping devices, Serial EEPROMs, microperipherals, non-volatile memory and analog products. In addition, Microchip's quality system for the design and manufacture of development systems is ISO 9001 certified.
2002 Microchip Technology Inc.
DS21358B-page 13
M
WORLDWIDE SALES AND SERVICE
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03/01/02
' "% '
DS21358B-page 14
2002 Microchip Technology Inc.


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